- 您现在的位置：买卖IC网 > Sheet目录415 > FDC6301N (Fairchild Semiconductor)IC FET DGTL N-CH DUAL 25V SSOT6
Typical Electrical Characteristics (continued)
5
30
4
I D = 0.2A
V DS = 5V
10V
15V
20
10
C iss
3
2
5
3
2
f = 1 MHz
C oss
1
1
V GS = 0V
C rss
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.5 1 2 5
V , DRAIN TO SOURCE VOLTAGE (V)
DS
10
25
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics .
1
Figure 8. Capacitance Characteristics .
5
IM
ON
RD
1m
10
0.5
0.2
S(
)L
IT
10
0m
s
ms
s
4
3
SINGLE PULSE
R θ JA =See note 1b
T A = 25°C
0.1
1s
DC
2
0.05
V GS = 2.7V
0.02
SINGLE PULSE
R θ JA =See note 1b
T A = 25°C
1
0.01
0.5
1
2
5
10
15
25
35
0
0.01
0.1
1
10
100
300
V
DS
, DRAI N-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
R θ JA (t) = r(t) * R θ JA
0.2
0.1
0.2
0.1
P(pk)
R θ JA = See Note 1b
0.05
0.05
0.02
t 1
t 2
0.02
0.01
0.01
Single Pulse
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t 2
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve .
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
FDC6301N Rev.D
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDC6302P
MOSFET P-CH DUAL 25V SSOT6
FDC6303N
IC FET DGTL N-CH DUAL 25V SSOT6
FDC6304P
MOSFET P-CH DUAL 25V SSOT-6
FDC6305N
MOSFET N-CHAN DUAL 20V SSOT6
FDC6306P
MOSFET P-CHAN DUAL 20V SSOT6
FDC6310P
MOSFET P-CH DUAL 20V SSOT-6
FDC6312P
MOSFET P-CH DUAL 20V SSOT-6
FDC6318P
MOSFET P-CH DUAL 12V SSOT-6
相关代理商/技术参数
FDC6301N
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 25V 0.22A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV ;RoHS Compliant: Yes
FDC6301N
制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CH MOSFET, 25V, SUPER SOT-6
FDC6301N_01
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET
FDC6301N_G
制造商:Fairchild Semiconductor Corporation 功能描述:TRANS MOSFET N-CH 25V 0.22A 6PIN SUPERSOT - Tape and Reel
FDC6301N_Q
功能描述:MOSFET SSOT-6 N-CH 25V
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6302P
功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6302P
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-25V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
FDC6302P
制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL P MOSFET -25V -120mA SUPERSOT6